HIGH-DENSITY BORON-CARBIDE CERAMICS

Boron carbide/n-silicon carbide heterojunction diodes

Mechanisms of High-Temperature Fatigue in Silicon Carbide Ceramics

produce a composite, which is typically accomplished by incorporating continuous fibers, whiskers, platelets, or second The high-temperature mechanical properties of an in situ phase particles (3). For monolithic ceramics, in situ toughening toughened silicon carbide, with Al, B and C sintering additives can also be effective with microstructures consisting of elongated (ABC-Sic), have been exa...

Sintering boron carbide ceramics without grain growth by plastic deformation as the dominant densification mechanism

A new ceramic sintering approach employing plastic deformation as the dominant mechanism is proposed, at low temperature close to the onset point of grain growth and under high pressure. Based on this route, fully dense boron carbide without grain growth can be prepared at 1,675-1,700 °C and under pressure of (≥) 80 MPa in 5 minutes. The dense boron carbide shows excellent mechanical properties...

Magnetoresistance in boron carbide junctions

Shock-wave strength properties of boron carbide and silicon carbide